Energy & Environment Nanomaterial Laboratory
Resistive switching memory refers to a device that saves data with different resistance states by electric field. The resistive switching memory has the advantage of scalability with a simple sandwich structure of the top electrode/active layer/bottom electrode. In addition, the resistive switching memory has attracted attention for next-generation memory due to have an operation speed similar to DRAM. Many materials such as oxides, chalcogenides and organic materials have been reported for conventional resistive switching memory. However, the conventional resistive switching memory have critical issues such as reliability, uniformity, and high-power consumption. To solve these issues, halide perovskite materials with superior reliability and uniformity were used as the reserve switching memory. Moreover, the halide perovskite have lower activation energy of ion migration and faster mobility of ion related defects than the oxides. The high-power consumption of conventional resistive switching memory can also be solved. In EENL, we study various engineering , mechanism analysis , discovery of halide-based new materials.